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US 7,248,447 B2Granted
High Hc pinned self-pinned sensor
AssigneeHitachi Global Storage Technologies Netherlands B.V.
InventorHardayal Singh Gill
Life of this patent
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Abstract
A self pinned magnetoresistive sensor having an anitparallel coupled pinned layer structure including a high coercivity (high Hc) layer of TbCo.
Claims18
A magnetoresistive sensor, comprising:
- a free layer;
- a pinned layer structure;
- and
- a spacer layer sandwiched between said free layer and said pinned layer structure;
- said pinned layer structure further comprising:
- a first magnetic (AP1) layer;
- a second magnetic (AP2) layer;
- and
- a non-magnetic antiparallel coupling layer;
- said AP1 and AP2 layers being antiparallel coupled across said non-magnetic antiparallel coupling layer;
- wherein said (AP2) layer comprises a first sub-layer comprising a magnetic material and a second sub-layer comprising TbCo,
- wherein said AP1 layer and said AP2 layer have magnetic thicknesses that are the same.
9 more elements
A magnetoresistive sensor as in clam 1, wherein said pinned layer is formed above said free layer after formation of said free layer.
A magnetoresistive sensor, comprising:
- a free layer;
- a pinned layer structure;
- and
- a non-magnetic electrically insulating barrier layer;
- said pinned layer structure further comprising:
- a first magnetic (AP1) layer;
- a second magnetic (AP2) layer;
- and
- a non-magnetic a antiparallel coupling layer;
- said AP1 and AP2 layers being antiparallel coupled across said non-magnetic antiparallel coupling layer;
- wherein said (AP2) layer comprises a first sublayer comprising
- a magnetic material and a second sub-layer comprising TbCo,
- wherein said AP1 layer and said AP2 layer have magnetic thicknesses that are the same.
10 more elements
A magnetic data recording system, comprising:
- a magnetic medium;
- a slider;
- an actuator connected with said slider to locate slider adjacent to said magnetic medium;
- and
- a magnetic head attached to said slider said magnetic head including a magnetoresistive sensor, further comprising:
- a free layer;
- a pinned layer structure;
- and
- a spacer layer sandwiched between said free layer and said pinned layer structure;
- said pinned layer structure further comprising;
- a first magnetic (AP1) layer;
- a second magnetic (AP2) layer;
- and
- a non-magnetic antiparallel coupling layer;
- said AP1 and AP2 layers being antiparallel coupled across said non-magnetic antiparallel coupling layer;
- wherein said (AP2) layer comprises a first sub-layer comprising a magnetic material and a second sub-layer comprising TbCo,
- wherein said AP1 layer and said AP2 layer have magnetic thicknesses that are the same.
14 more elements
Dependencies are inferred from the claim text.