Thermal head including Si substrate and method for manufacturing the same
AssigneeAlps Electric Co., Ltd.
InventorSunao Okitsu
Life of this patent
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Abstract
A thermal head includes a heat storage layer disposed on a substrate surface by lamination, a plurality of heating elements disposed on the heat storage layer, a plurality of individual electrodes, each connected individually to one end-portion of a heating element in the length direction of the resistance, and a common electrode electrically connected to the other end-portions of all heating elements in the length direction of the resistance, wherein the above-described substrate is a Si substrate having a resistivity of 20 mΩ·cm or less, the Si substrate is provided with an exposure region including no heat storage layer, and a contact portion is disposed on the exposure region, so as to keep the common electrode and the Si substrate surface in ohmic contact.
Claims14
A thermal head comprising a heat storage layer disposed on a substrate surface by lamination, a plurality of heating elements disposed on the heat storage layer, a plurality of individual electrodes, each electrically connected individually to one end-portion of a heating element in a length direction of resistance, and a common electrode electrically connected to an opposing end-portions of all heating elements in the length direction of the resistance,
- wherein the substrate is a Si substrate having a resistivity of 20 mΩ·cm or less, and
- wherein the Si substrate is provided with an exposure region including no heat storage layer, and a contact portion is disposed on the exposure region, so as to keep the common electrode and the Si substrate surface in ohmic contact.
A method for manufacturing a thermal head, the method comprising the steps of:
- preparing a Si substrate having a resistivity of 20 mΩ·cm or less;
- forming a heat storage layer all over the Si substrate surface;
- removing a part of the heat storage layer disposed on the Si substrate to form an exposure region and to determine a sectional shape of the heat storage layer adjacent to the exposure region;
- forming a plurality of heating elements, a common electrode connected commonly to one end-portion of each of the plural heating elements in a length direction of resistance, and a plurality of individual electrodes, each connected individually to an opposing end-portion of one of the heating elements in the length direction of the resistance, on the heat storage layer;
- and
- forming a contact portion on the exposure region, while the contact portion is in contact with an end portion of the common electrode on an exposure region side, so as to keep the common electrode and the Si substrate surface in ohmic contact.
Dependencies are inferred from the claim text.