Curvature corrected bandgap circuit
AssigneeNational Semiconductor Corporation
InventorSiew Siong Teo
Life of this patent
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Abstract
An apparatus and method provide for curvature corrected temperature variations in a band-gap reference circuit. The apparatus includes a band-gap cell, an IPTAT circuit, a resistor, and a feedback circuit. The band-gap cell is arranged to provide a band-gap voltage. The resistor circuit is coupled to both the band-gap cell and the IPTAT circuit. The feedback circuit is arranged to selectively activate the IPTAT circuit such that an additional correction factor is added to the temperature response of the band-gap cell to provide a second order curve. The IPTAT circuit can be implemented as a simple transistor that is responsive to changes in absolute temperature.
Claims18
An apparatus for providing a temperature compensated reference signal, comprising:
- a band-gap cell that is arranged to provide a first signal that has a first temperature response profile, wherein the band-gap cell comprises a first bipolar device, a second bipolar device, a first resistor that is coupled between a first sense node and the first bipolar device, a second resistor that is coupled between the first sense node and a common node, a third resistor that is coupled between the common node and the second bipolar device at a second sense node, and an error amplifier that is responsive to signals from the first sense node and the second sense node, wherein a resistor circuit is coupled between an output node of the error amplifier and the common node;
- a PTAT circuit that is arranged to selectively provide a second signal that has a second temperature response profile to the common node when active;
- a feedback circuit that is arranged to selectively activate the PTAT circuit in response to an output from the band-gap cell, wherein the output of the band-gap cell corresponds to the output node of the error amplifier;
- and
- the resistor circuit, that is coupled between the output from the band-gap cell and the common node, is arranged in cooperation with the band-gap cell and the PTAT circuit to generate the temperature compensated reference signal at the common node as a combination of the first signal and the second signal such that the temperature compensated reference signal has a third temperature response profile that is determined by combination of the first temperature response profile and the second temperature response profile.
An apparatus for providing a temperature compensated reference signal, comprising:
- a band-gap cell means that is coupled between a first common node and a power supply node, wherein the band-gap cell means is arranged to provide a first signal that has a first temperature response profile at the first common node, wherein the band-gap cell means is also arranged to provide an output at a second common node;
- a PTAT means that is arranged to selectively provide a second signal that has a second temperature response profile at the first common node when active, wherein the second temperature response profile is proportional to absolute temperature;
- a sense means that is arranged to sense the output of the band-gap cell means at the second common node and selectively activate the PTAT means in response to the sensed output;
- and
- a resistor means that is coupled between the second common node and the first common node, wherein the resistor means is arranged to combine the first signal and the second signal at the first common node such that the output of the band-gap cell means at the second common node corresponds to a temperature compensated reference signal with a third temperature response profile that is determined by combination of the first temperature response profile and the second temperature response profile.
A method for providing a temperature compensated reference signal, comprising:
- coupling a band-gap cell between a first common node and a power supply node;
- coupling a resistor between the first common node and a second common node;
- providing a band-gap voltage from the band-gap cell at the second common node when the band-gap cell is active, wherein the band-gap cell is arranged to operate with a first temperature profile;
- monitoring voltages at the second common node with a voltage divider to provide a feedback signal that is responsive to changes in the band-gap voltage;
- coupling the feedback signal to an input of a PTAT circuit that has a second temperature profile;
- activating the PTAT circuit in response to the feedback signal when an operating temperature associated with the PTAT circuit reaches a temperature trip-point;
- and
- coupling an output signal from the PTAT circuit to the first common node when the PTAT circuit is active such that the temperature profile associated with the band-gap voltage is modified by the PTAT circuit to create a third temperature profile that corresponds to the combined temperature profiles of the band-gap cell and the PTAT circuit.
Dependencies are inferred from the claim text.