Bus driver with well voltage control section
AssigneeSharp Kabushiki Kaisha
InventorsMunehiro Uratani, Yuji Kasai, Tetsuya Higuchi, Eiichi Takahashi
Life of this patent
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Abstract
A bus driving device is provided with a driver circuit for driving a bus line thereof. The driver circuit includes an MOS transistor whose well is separated from other circuits. Further, the bus driving device is provided with a voltage control section for adjusting a well voltage, in accordance with a level of a signal in the bus line. With this bus driving device, a threshold voltage of the MOS transistor is set at a predetermined target value.
Claims7
A bus driving device comprising:
- a driver circuit for driving a bus line, the driver circuit including an MOS transistor whose well is separated from other circuits;
- and
- a voltage control section for adjusting, in accordance with a level of a signal in the bus line, a value of a well voltage, so that a threshold voltage of the MOS transistor is kept at a predetermined target value, wherein
- the voltage control section includes:
- a voltage difference finding section for finding a difference between the target value and the threshold voltage of the MOS transistor, based on the level of the signal in the bus line;
- and
- a voltage output section for outputting the well voltage so as to compensate the difference found by the voltage difference finding section, and the voltage output section includes:
- a selecting voltage finding section for finding a selecting voltage based on the difference;
- and
- a selection output section for selecting, from a plurality of pre-generated voltages, the well voltage in accordance with the selecting voltage found by the selecting voltage finding section.
A bus driving device comprising:
- a driver circuit for driving a bus line, the driver circuit including an MOS transistor whose well is separated from other circuits;
- and
- a voltage control section for adjusting, in accordance with a level of a signal in the bus line, a value of a well voltage, so that a threshold voltage of the MOS transistor is kept at a predetermined target value, wherein
- the voltage control section includes:
- a voltage difference finding section for finding a difference between the target value and the threshold voltage of the MOS transistor, based on the level of the signal in the bus line;
- and
- a voltage output section for outputting the well voltage so as to compensate the difference found by the voltage difference finding section, and
- the voltage output section includes:
- a voltage generating section for generating a plurality of voltages;
- a selection output section for (i) selecting, from the plurality of voltages, the well voltage in accordance with selection control data, and (ii) outputting the voltage;
- and
- a data calculating section for calculating the selection control data based on the difference.
A semiconductor integrated circuit comprising:
- a bus line;
- and
- a bus driving device having
- (a) a driver circuit for driving the bus line, the driver circuit including an MOS transistor whose well is separated from other circuits;
- and
- (b) a voltage control section for adjusting, in accordance with a level of a signal in the bus line, a value of a well voltage, so that a threshold voltage of the MOS transistor is kept at a predetermined target value, wherein
- the voltage control section includes:
- a voltage difference finding section for finding a difference between the target value and the threshold voltage of the MOS transistor, obtained on a basis of the level of the signal in the bus line;
- and
- a voltage output section for outputting the well voltage so as to compensate the difference found by the voltage difference finding section, and
- the voltage output section includes:
- a selecting voltage finding section for finding a selecting voltage based on the difference;
- and
- a selection output section for selecting, from a plurality of pre-generated voltages, the well voltage in accordance with the selecting voltage found by the selecting voltage finding section.
A semiconductor integrated circuit comprising:
- a bus line;
- and
- a bus driving device having
- (a) a driver circuit for driving the bus line, the driver circuit including an MOS transistor whose well is separated from other circuits;
- and
- (b) a voltage control section for adjusting, in accordance with a level of a signal in the bus line, a value of a well voltage, so that a threshold voltage of the MOS transistor is kept at a predetermined target value, wherein
- the voltage control section includes:
- a voltage difference finding section for finding a difference between the target value and the threshold voltage of the MOS transistor, obtained on a basis of the level of the signal in the bus line;
- and
- a voltage output section for outputting the well voltage so as to compensate the difference found by the voltage difference finding section, and
- the voltage output section includes:
- a voltage generating section for generating a plurality of voltages;
- a selection output section for (i) selecting, from the plurality of voltages, the well voltage in accordance with selection control data, and (ii) outputting the voltage;
- and
- a data calculating section for calculating the selection control data based on the difference.
Dependencies are inferred from the claim text.