Circuit and method for supplying programming potential at voltages larger than BVDss of programming transistors

A circuit for applying current to an antifuse coupled between a first node and a second node with a potential VPP, the circuit disposed on an integrated circuit and comprising:

• a first n-channel MOS transistor having a source coupled to a third node switchably coupleable between a potential of about VPP/2 and ground potential, a drain, and a gate;
• a second n-channel MOS transistor having a source coupled to said drain of said first n-channel MOS transistor, a drain coupled to the second node, and a gate;
• a bootstrap circuit formed form a third n-channel MOS transistor having a source coupled to said first node, a drain coupled to a node selectively carrying the potential VPP or the potential VPP/2, and a gate, and a fourth n-channel MOS transistor having a source coupled to said gate of said third n-channel MOS transistor, a drain coupled to a precharge select node, and a gate coupled to a programming control node;
• and
• circuitry coupled to said gate of said first n-channel MOS transistor and said gate of said second n-channel MOS transistor and configured to, in a current-applying mode, apply a potential of either zero volts or about VPP/2 to said gate of said first n-channel MOS transistor and to apply a potential of about VPP/2 to said gate of said second n-channel MOS transistor.