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AssigneeRichtek Technology Corporation
InventorsChun-Yen Huang, Hung-Der Su, Jing-Meng Liu, Chung-Lung Pai, Shih-Hui Chen, Yang-Ping Hung
Estimating the term…
A method, which is for determining switching state of a transistor-based switching device that includes a set of transistors, includes the steps of: applying a bias voltage to a transistor having a fastest response so as to dispose the transistors in the set in a desired transistor state; detecting a voltage level at a transistor having a slowest response to the bias voltage; and comparing the detected voltage level with a predetermined threshold voltage level in order to determine the switching state of the switching device. A transistor-based switching device is also disclosed.
A method for determining a switching state of a transistor-based switching device, the switching device including a set of transistors that are connected in parallel in such a manner that one of the transistors has a fastest response to a bias voltage in relation to the other transistors in the set, and that another of the transistors has a slowest response to the bias voltage in relation to the other transistors in the set, each of the transistors in the set having a gate, the gate of the transistor having the fastest response to the bias voltage being provided with a drive end, the gate of the transistor having the slowest response to the bias voltage being provided with a detected end, said method comprising the steps of:
A method for determining a switching state of a transistor-based switching device, the switching device including first and second sets of transistors, the transistors in each of the first and second sets being connected in parallel in such a manner that one of the transistors in each of the first and second sets has a fastest response to a bias voltage in relation to the other transistors in the same one of the first and second sets, and that another of the transistors in each of the first and second sets has a slowest response to the bias voltage in relation to the other transistors in the same one of the first and second sets , each of the transistors in the each of the first and second sets having a gate, the gate of the transistor in each of the first and second sets having the fastest response to the bias voltage being provided with a drive end, the gate of the transistor in each of the first and second sets having the slowest response to the bias voltage being provided with a detected end, said method comprising the steps of:
A transistor-based switching device, comprising:
Dependencies are inferred from the claim text.