Electric circuit and semiconductor device

An electric circuit for outputting an output electric potential Vout through an output terminal on the basis of an input electric potential Vin inputted to an input terminal, comprising:

• a rectification type device having first and second electrodes;
• a first transistor having gate, third and fourth electrodes;
• and
• a second transistor for getting the output electric potential Vout;
• wherein the first electrode is electrically connected with the input terminal;
• wherein the second electrode is electrically connected with the gate electrode of the first transistor;
• wherein the third electrode is electrically connected with a wiring;
• wherein the fourth electrode is electrically connected with one of a source and a drain of the second transistor and the output terminal;
• and
• wherein a voltage V, the input electric potential Vin, and a threshold value voltage Vth of the rectification type device satisfy a relation of V>(Vin+Vth) and the electric circuit comprises a third transistor for getting the voltage V;
• wherein the rectifying device includes a third transistor;
• wherein one of the first electrode and the second electrode is one of a source and a drain of the third transistor and a gate of the third transistor;
• and
• wherein the other of the first electrode and the second electrode is the other of the source and the drain of the third transistor.

A semiconductor device comprising:

• a rectifying device;
• a first transistor;
• and
• a switch;
• wherein a first electrode of the rectifying device is electrically connected to a gate of the first transistor;
• wherein one of a source and a drain of the first transistor is electrically connected to a first power supply line;
• wherein the other of the source and the drain of the first transistor is electrically connected to a first electrode of the switch;
• wherein a second electrode of the switch is electrically connected to a second power supply line;
• wherein a first electric potential is inputted to a second electrode of the rectifying device;
• wherein a second electric potential is outputted from the other of the source and the drain of the first transistor and the first electrode of the switch;
• wherein the rectifying device includes a second transistor;
• wherein one of the first electrode and the second electrode of the rectifying device is one of a source and a drain of the second transistor and a gate of the second transistor, and
• wherein the other of the first electrode and the second electrode of the rectifying device is the other of the source and the drain of the second transistor.

A semiconductor device comprising:

• a rectifying device;
• a first transistor;
• and
• a second transistor;
• wherein a first electrode of the rectifying device is electrically connected to a gate of the first transistor;
• wherein one of a source and a drain of the first transistor is electrically connected to a first power supply line;
• wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor;
• wherein the other of the source and the drain of the second transistor is electrically connected to a second power supply line;
• wherein a first electric potential is inputted to a second electrode of the rectifying device;
• wherein a second electric potential is inputted to a gate of the second transistor;
• wherein a third electric potential is outputted from the other of the source and the drain of the first transistor and the one of the source and the drain of the second transistor;
• wherein the rectifying device includes a third transistor;
• and
• wherein one of the first electrode and the second electrode of the rectifying device is one of a source and a drain of the third transistor and a gate of the third transistor, and
• wherein the other of the first electrode and the second electrode of the rectifying device is the other of the source and the drain of the third transistor.

A semiconductor device comprising:

• rectifying device;
• a transistor;
• and
• a switch;
• wherein a first electrode of the rectifying device is electrically connected to a gate of the transistor;
• wherein one of a source and a drain of the transistor is electrically connected to a first power supply line;
• wherein the other of the source and the drain of the transistor is electrically connected to a first electrode of the switch;
• wherein a second electrode of the switch is electrically connected to a second power supply line;
• wherein a fist electric potential is inputted to a second electrode of the rectifying device;
• wherein a second electric potential is outputted from the other of the source and the drain of the transistor and the first electrode of the switch, and
• wherein the rectifying device comprise a diode.

A semiconductor device comprising:

• a rectifying device;
• a first transistor;
• and
• a second transistor;
• wherein a fist electrode of the rectifying device is electrically connected to a gate of the first transistor;
• wherein one of a source and a drain of the first transistor is electrically connected to a first power supply line;
• wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor;
• wherein the other of the source and the drain of the second transistor is electrically connected to a second power supply line;
• wherein a second electric potential is inputted to a gate of the second transistor;
• wherein a third electric potential is outputted from the other of the source and the drain of the first transistor and the one of the source and the drain of the second transistor, and
• wherein the rectifying device comprises a diode.

A semiconductor device comprising:

• a rectifying device;
• a first transistor;
• and
• a switch;
• wherein a first electrode of the rectifying device is electrically connected to a gate of the first transistor;
• wherein one of a source and a drain of the first transistor is electrically connected to a first power supply line;
• wherein the other of the source and the drain of the first transistor is electrically connected to a first electrode of the switch;
• wherein a second electrode of the switch is electrically connected to a second power supply line;
• wherein a second electrode of the rectifying device is electrically connected to an input terminal;
• wherein the other of the source and the drain of the first transistor and the first electrode of the switch are electrically connected to an output terminal,
• wherein the rectifying device includes a second transistor,
• wherein one of the first electrode and the second electrode of the rectifying device is one of a source and a drain of the second transistor and a gate of the second transistor, and
• wherein the other of the first and the second electrode of the rectifying device is the other of the source and the drain of the second transistor.

A semiconductor device comprising:

• a rectifying device;
• a transistor;
• and
• a switch;
• wherein a first electrode of the rectifying device is electrically connected to a gate of the transistor;
• wherein one of a source and a drain of the transistor is electrically connected to a first power supply line;
• wherein the other of the source and the drain of the transistor is electrically connected to a first electrode of the switch;
• wherein a second electrode of the switch is electrically connected to a second power supply line;
• wherein a second electrode of the rectifying device is electrically connected to an input terminal;
• wherein the other of the source and the drain of the transistor and the first electrode of the switch are electrically connected to an output terminal, and
• wherein the rectifying device comprises a diode.

A semiconductor device comprising:

• a rectifying device;
• a first transistor;
• and
• a second transistor;
• wherein a first electrode of the rectifying device is electrically connected to a gate of the first transistor;
• wherein one of a source and a drain of the first transistor is electrically connected to a first power supply line;
• wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor;
• wherein the other of the source and the drain of the second transistor is electrically connected to a second power supply line;
• wherein a second electrode of the rectifying device is electrically connected to a first input terminal;
• wherein a gate of the second transistor is electrically connected to a second input terminal;
• wherein the other of the source and the drain of the first transistor and the one of the source and the drain of the second transistor are electrically connected to an output terminal,
• wherein the rectifying device includes a third transistor,
• wherein one of the first electrode and the third electrode of the rectifying device is one of a source and a drain of the third transistor and a gate of the third transistor, and
• wherein the other of the first electrode and the second electrode of the rectifying device is the other of the source and the drain of the third transistor.

A semiconductor device comprising:

• a rectifying device;
• a first transistor;
• and
• a second transistor;
• wherein a first electrode of the rectifying device is electrically connected to a gate of the first transistor;
• wherein one of a source and a drain of the first transistor is electrically connected to a first power supply line;
• wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor;
• wherein the other of the source and the drain of the second transistor is electrically connected to a second power supply line;
• wherein a second electrode of the rectifying device is electrically connected to a first input terminal;
• wherein a gate of the second transistor is electrically connected to a second input terminal;
• wherein the other of the source and the drain of the first transistor and the one of the source and the drain of the second transistor are electrically connected to an output terminal, and
• wherein the rectifying device comprises a diode.