Rear plate for plasma display panel

A rear plate of a plasma display panel, the rear plate comprising:

• a glass substrate;
• electrodes formed in a shape of patterns on an upper surface of the glass substrate;
• a dielectric layer formed on upper surfaces of the electrode and the upper surface of the glass substrate;
• barrier walls formed in a shape of a pattern through etching on an upper surface of the dielectric layer;
• and
• phosphorous layers formed on side surfaces and bottom surfaces of the barrier walls, wherein:
• the electrodes has a thickness of 2 to 8 μm and a specific resistance of 1.0×10−6 to 5.0×10−6 Ωcm;
• the dielectric layer is made from a first mixture which includes a first filler, organic material, additives, and at least one glass powder selected from among a first glass powder and a second glass powder, the first glass powder including PbO of 30 to 80 wt %, ZnO of 0 to 20 wt %, SiO2 of 0 to 20 wt %, B2O3 of 5 to 40 wt %, Al2O3 of 0 to 12 wt %, Na2O+K2O+Li2O of 0 to 5 wt %, and BaO+CaO+MgO+SrO of 0 to 5 wt %, the second glass powder including Bi2O3 of 36 to 84 wt %, B2O3 of 5 to 28 wt %, PbO of 0 to 46 wt %, ZnO of 0 to 30 wt %, Al2O3 of 0 to 13 wt %, SiO2 of 0 to 10 wt %, Na2O+K2O+Li2O of 0 to 5 wt %, and BaO+CaO+MgO+SrO of 0 to 3 wt %, each of the first and second glass powders having an average particle diameter of 1 to 10 μm, a softening temperature of 390 to 550° C., and a thermal expansive coefficient of 63×10−7 to 83×10−7/° C., the first filler having an average particle diameter of 0.01 to 10 μm, the dielectric layer having a dielectric constant of 8 to 20, a reflectance of 50 to 80%, an etching rate of 0.01 to 1.0 μm/min with respect to inorganic acid, and a thickness of 10 to 30 μm, the dielectric layer being formed in a shape of a green tape and then attached to upper surfaces of the electrodes;
• the barrier walls are made from a second mixture which includes a second filler, organic material, additives, and at least one glass powder selected from the group consisting of a third, fourth, and fifth glass powders, the third glass powder including ZnO of 0 to 48 wt %, SiO2 of 0 to 21 wt %, B2O3 of 25 to 56 wt %, Al2O3 of 0 to 12 wt %, Na2O+K2O+Li2O of 0 to 38 wt %, and BaO+CaO+MgO+SrO of 0 to 15 wt %, the fourth glass powder including PbO of 25 to 65 wt %, ZnO of 0 to 35 wt %, SiO2 of 0 to 26 wt %, B2O3 of 0 to 30 wt %, Al2O3+SnO2 of 0 to 13 wt %, Na2O+K2O+Li2O of 0 to 19 wt %, BaO of 0 to 26 wt %, and CaO+MgO+SrO of 0 to 13 wt %, the fifth glass powder including PbO of 35 to 55 wt %, B2O3 of 18 to 25 wt %, ZnO of 0 to 35 wt %, BaO of 0 to 16 wt %, SiO2+Al2O3+SnO2 of 0 to 9 wt %, CoO+CuO+MnO2+Fe2O3 of 0 to 15 wt %, Na2O+K2O+Li2O of 0 to 19 wt %, and CaO+MgO+SrO of 0 to 13 wt %, the third glass powder having a softening temperature of 460 to 630° C., a thermal expansive coefficient of 64×10−7 to 105×10−7/° C., and an average particle diameter of 0.5 to 17 μm, each of the fourth and fifth glass powders having a softening temperature of 390 to 550° C., a thermal expansive coefficient of 63×10−7 to 110×10−7/° C., and an average particle diameter of 0.5 to 17 μm, the second filler having an average particle diameter of 0.01 to 10 μm, the barrier walls being formed with a height of 100 to 180 μm by attaching a barrier wall layer formed in a shape of green tapes to an upper surface of the dielectric layer, firing the barrier wall layer together with the dielectric layer at a temperature between 400° C. and 700° C., and then etching the barrier wall layer, the barrier wall layer having a dielectric constant of 5 to 18, a reflectance of 40 to 80%, and an etching rate of 1.0 to 50.0 μm/min with respect to inorganic acid;
• the phosphorous layers have a thickness of 10 to 50 μm;
• and
• a difference between the thermal expansive coefficients of the dielectric layer and the barrier wall layer has a percentage between 0 and 10%, and a difference between the softening temperatures of the dielectric layer and the barrier wall layer has a value between 0 and 20° C.

A rear plate of a plasma display panel, the rear plate comprising:

• a glass substrate;
• electrodes formed in a shape of patterns on an upper surface of the glass substrate;
• a dielectric layer formed on upper surfaces of the electrode and the upper surface of the glass substrate;
• barrier walls formed in a shape of a pattern through etching on an upper surface of the dielectric layer;
• and
• phosphorous layers formed on side surfaces and bottom surfaces of the barrier walls, wherein:
• the electrodes has a thickness of 2 to 8 μm and a specific resistance of 1.0×10−6 to 5.0×10−6 Ωcm;
• the dielectric layer is made from a first mixture which includes a first filler, organic material, additives, and at least one glass powder selected from among a first glass powder and a second glass powder, the first glass powder including PbO of 30 to 80 wt %, ZnO of 0 to 20 wt %, SiO2 of 0 to 20 wt %, B2O3 of 5 to 40 wt %, Al2O3 of 0 to 12 wt %, Na2O+K2O+Li2O of 0 to 5 wt %, and BaO+CaO+MgO+SrO of 0 to 5 wt %, the second glass powder including Bi2O3 of 36 to 84 wt %, B2O3 of 5 to 28 wt %, PbO of 0 to 46 wt %, ZnO of 0 to 30 wt %, Al2O3 of 0 to 13 wt %, SiO2 of 0 to 10 wt %, Na2O+K2O+Li2O of 0 to 5 wt %, and BaO+CaO+MgO+SrO of 0 to 3 wt %, each of the first and second glass powders having an average particle diameter of 1 to 10 μm, a softening temperature of 390 to 550° C., and a thermal expansive coefficient of 63×10−7 to 83×10−7/° C., the first filler having an average particle diameter of 0.01 to 10 μm, the dielectric layer having a dielectric constant of 8 to 20, a reflectance of 50 to 80%, an etching rate of 0.01 to 1.0 μm/min with respect to inorganic acid, and a thickness of 10 to 30 μm, the dielectric layer being formed in a shape of a green tape;
• the barrier walls are made from a second mixture which includes a second filler, organic material, additives, and at least one glass powder selected from the group consisting of a third, fourth, and fifth glass powders, the third glass powder including ZnO of 0 to 48 wt %, SiO2 of 0 to 21 wt %, B2O3 of 25 to 56 wt %, Al2O3 of 0 to 12 wt %, Na2O+K2O+Li2O of 0 to 38 wt %, and BaO+CaO+MgO+SrO of 0 to 15 wt %, the fourth glass powder including PbO of 25 to 65 wt %, ZnO of 0 to 35 wt %, SiO2 of 0 to 26 wt %, B2O3 of 0 to 30 wt %, Al2O3+SnO2 of 0 to 13 wt %, Na2O+K2O+Li2O of 0 to 19 wt %, BaO of 0 to 26 wt %, and CaO+MgO+SrO of 0 to 13 wt %, the fifth glass powder including PbO of 35 to 55 wt %, B2O3 of 18 to 25 wt %, ZnO of 0 to 35 wt %, BaO of 0 to 16 wt %, SiO2+Al2O3+SnO2 of 0 to 9 wt %, CoO+CuO+MnO2+Fe2O3 of 0 to 15 wt %, Na2O+K2O+Li2O of 0 to 19 wt %, and CaO+MgO+SrO of 0 to 13 wt %, the third glass powder having a softening temperature of 460 to 630° C., a thermal expansive coefficient of 64×10−7 to 105×10−7/° C., and an average particle diameter of 0.5 to 17 μm, each of the fourth and fifth glass powders having a softening temperature of 390 to 550° C., a thermal expansive coefficient of 63×10−7 to 110×10−7/° C., and an average particle diameter of 0.5 to 17 μm, the second filler having an average particle diameter of 0.01 to 10 μm;
• the phosphorous layers have a thickness of 10 to 50 μm;
• and
• a difference between the thermal expansive coefficients of the dielectric layer and the barrier wall layer has a percentage between 0 and 10%, and a difference between the softening temperatures of the dielectric layer and the barrier wall layer has a value between 0 and 20° C., wherein
• a barrier wall layer formed in a shape of green tapes, which has a dielectric constant of 5 to 18, a reflectance of 40 to 80%, and an etching rate of 1.0 to 50.0 μm/min with respect to inorganic acid, is integrated with the dielectric layer to form a lamination of dielectric layer/barrier wall layer, and the lamination of dielectric layer/barrier wall layer is attached to the upper surfaces of the electrodes and the glass substrate, is baked at a temperature between 400° C. and 700° C., and is then etched, so that the barrier walls are formed with a height of 100 to 180 μm.