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US 7,247,950 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeFujitsu Limited
InventorsTetsuya Fujisawa, Masamitsu Ikumo
Life of this patent
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Abstract
A semiconductor device comprises a frame provided on a substrate to form a semiconductor-chip accommodating part on the substrate. A semiconductor chip is provided in the semiconductor-chip accommodating part. An organic insulating layer is provided to cover the semiconductor chip and the frame. A wiring layer is provided on the organic insulating layer. In the semiconductor device, the frame comprises gaps which are arranged in a longitudinal direction of the frame.
Claims13
A semiconductor device comprising:
- a frame provided on a substrate to form a semiconductor-chip accommodating part on the substrate;
- a semiconductor chip provided in the semiconductor-chip accommodating part;
- an organic insulating layer provided to cover the semiconductor chip and the frame;
- and
- a wiring layer provided on the organic insulating layer,
- the frame comprising gaps which are arranged in a longitudinal direction of the frame.
3 more elements
A semiconductor device comprising:
- a first frame provided on a substrate to form a first semiconductor-chip accommodating part on the substrate;
- a first semiconductor chip provided in the first semiconductor-chip accommodating part;
- a first organic insulating layer provided to cover the first semiconductor chip and the first frame;
- a first wiring layer provided on the first organic insulating layer;
- a second frame provided on the first organic insulating layer and the first wiring layer to form a second semiconductor-chip accommodating part on the first organic insulating layer and the first wiring layer;
- a second semiconductor chip provided in the second semiconductor-chip accommodating part;
- a second organic insulating layer provided to cover the second semiconductor chip and the second frame;
- and
- a second wiring layer provided on the second organic insulating layer,
- each of the first frame and the second frame comprising gaps which are arranged in a longitudinal direction thereof, respectively.
7 more elements
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a frame on a substrate to form a semiconductor-chip accommodating part on the substrate, the frame comprising gaps which are arranged in a longitudinal direction of the frame;
- providing a semiconductor chip in the semiconductor-chip accommodating part which is formed by the frame;
- providing an organic insulating layer to cover the semiconductor chip and the frame;
- and
- providing a wiring layer on the organic insulating layer.
2 more elements
Dependencies are inferred from the claim text.