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AssigneeInternational Business Machines Corporation
InventorsJohn Bruley, Roy A. Carruthers, Lynne Marie Gignac, Chao-Kun Hu, Eric Gerhard Liniger, Sandra Guy Malhotra, Stephen M. Rossnagel
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Disclosed is a procedure to coat the free surface of Cu damascene lines by a 1-5 nm thick element prior to deposition of the inter-level dielectric or dielectric diffusion barrier layer. The coating provides protection against oxidation, increases the adhesion strength between the Cu and dielectric, and reduces interface diffusion of Cu. In addition, the thin cap layer further increases electromigration Cu lifetime and reduces the stress induced voiding. The selective elements can be directly deposited onto the Cu embedded within the under layer dielectric without causing an electric short circuit between the Cu lines. These chosen elements are based on their high negative reduction potentials with oxygen and water, and a low solubility in and formation of compounds with Cu.
A multi-level interconnection structure comprising dual or single damascene Cu interconnects capped with 0.5-5 nm thick films of selected elements, said elements having a standard reduction of potential for electrochemical series from −0.01V to −4V, and a low solubility, less than 3 atomic percent at 300° C., and form compounds with Cu.
A multi-level interconnection structure comprising dual or single damascene Cu interconnects capped with 0.5-5 nm thick films of selected elements, said elements having a standard reduction of potential for electrochemical series from −0.01V to 4V, and a low solubility, less than 3 atomic percent of 300° C., and form compounds with Cu;
A multi-level interconnection structure comprising dual or single damascene Cu interconnects capped with 0.5-5 nm thick films of selected elements, said elements having a standard reduction of potential for electrochemical series from −0.01V to 4V, and a low solubility, less than 3 atomic percent of 300° C., and form compounds with Cu;
Dependencies are inferred from the claim text.