Metal filled semiconductor features with improved structural stability

A metal filled semiconductor feature with improved structural stability comprising:

• a metal filling an opening, said opening extending through a plurality of stacked dielectric layers, said opening disposed in closed communication with an underlying non-roughened conductive area;
• said opening further comprising sidewalls having isotropically etched sidewall surfaces forming serpentine shaped sidewall surfaces;
• wherein said serpentine shape comprises peaks and valleys alternating according to a stacking sequence of the plurality of stacked dielectric layers, said plurality comprising adjacent dielectric layers having alternating etching rates according to a relatively higher and a relatively lower etching rate.

A bonding pad with improved structural stability comprising:

• a metal filling an opening, said opening extending through a plurality of stacked passivation layers, said opening disposed in closed communication with an underlying non-roughened conductive area;
• said opening further comprising sidewalls having isotropically etched sidewall surfaces forming serpentine shaped sidewall surfaces;
• wherein said serpentine shape comprises peaks and valleys alternating according to a stacking sequence of the plurality of stacked passivation layers, said plurality comprising adjacent dielectric layers having sequentially alternating etching rates according to a relatively higher and a relatively lower etching rate.