Back to results
US 7,247,915 B2Granted
Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Wei Chang, Mei-Yun Wang, Shau-Lin Shue, Mong-Song Liang
Life of this patent
Estimating the term…
Abstract
A silicide method for integrated circuit and semiconductor device fabrication wherein a layer of nickel is formed over at least one silicon region of a substrate and a layer of cobalt is formed over the nickel layer. The cobalt/nickel bi-layer is then annealed to transform the bi-layer to a bi-silicide film having a cobalt-rich silicide portion and a nickel-rich silicide portion.
Claims1
A semiconductor device comprising:
- a gate;
- source/drain regions formed on opposite sides of the gate;
- and
- bi-silicide films formed over the gate and the source/drain regions, each of the bi-silicide films including a cobalt-rich portion and a nickel-rich portion, the cobalt-rich portion on a top of the nickel-rich portion,
- wherein the cobalt-rich portion is thinner than the nickel-rich portion.
2 more elements
Dependencies are inferred from the claim text.