Back to results
US 7,247,913 B2Granted
Semiconductor device having a Schottky source/drain transistor
AssigneeKabushiki Kaisha Toshiba
InventorAtsushi Yagishita
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises an island shaped channel layer formed on a substrate, the channel later being composed of a semiconductor material, a gate insulation film formed on the channel layer, a gate electrode formed on the gate insulation film, an insulation film formed on both side faces opposite to one direction of the channel layer, a source electrode and a drain electrode made of a metal material and formed on a side face of the insulation layer.
Claims11
A semiconductor device comprising:
- an island shaped channel layer formed on a substrate, the channel layer being composed of a semiconductor material;
- a gate insulation film formed on the channel layer;
- a gate electrode formed on the gate insulation film;
- an insulation film formed on both side faces opposite to one direction of the channel layer;
- and
- a pair of source/drain electrode made of a metal material and formed on both side faces of the insulation layer.
3 more elements
A semiconductor device comprising:
- a rectangle shaped channel layer formed on an insulator, the channel layer having two pairs of opposite side faces;
- a gate insulation film provided on a top face of the channel layer and on one of said pairs of side faces of the channel layer;
- an insulation film formed on the other of said pairs of side faces of the channel layer;
- and
- a pair of source/drain electrode made of a metal material provided on the insulation film.
2 more elements
Dependencies are inferred from the claim text.