US 7,247,899 B2Granted

Semiconductor device, photoelectric conversion device and method of manufacturing same

AssigneeCanon Kabushiki Kaisha

InventorsHideshi Kuwabara, Hiroshi Yuzurihara, Takayuki Kimura, Mahito Shinohara

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Abstract

In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled. In a photoelectric conversion device which is constructed in such a manner that on the whole area of a substrate of a specific conduction type there are disposed a buried layer of a conduction type opposite to the conduction type of the substrate and an epitaxial layer of the same conduction type as the conduction type of the substrate and that well of a conduction type opposite to the conduction type of the substrate are present in a part of the epitaxial layer, buried layer for well isolation of the same conduction type as the conduction type of the substrate which have a higher concentration than the epitaxial layer is disposed between the lower part of the well and the buried layer.

Claims6

Dependent claims

An image pickup device formed on a semiconductor substrate of a first conductivity type and having a first region in which photoelectric conversion elements are arranged, and a second region in which a peripheral circuit is arranged, comprising:

a first buried layer of a second conductivity type arranged on the semiconductor substrate, wherein the first buried layer extends from under the first region to under the second region;
an epitaxial layer of the first conductivity type arranged on the first buried layer, extending from under the first region to under the second region and electrically isolated from the semiconductor substrate by the first buried layer;
a well layer of the second conductivity type arranged within the epitaxial layer, wherein a source and drain of a MOSFET of the first conductivity type is formed in the well layer;
and
a second buried layer of the first conductivity type arranged at a bottom of the well layer and within the epitaxial layer, and doped with an impurity at a concentration higher than the epitaxial layer so as to electrically isolate the well layer from the first buried layer.

2 more elements

Dependencies are inferred from the claim text.