Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured

A method of forming a conductive line for a semiconductor device, comprising:

• (a) forming a catalytic metal layer on a surface of an electrode of the semiconductor device;
• (b) forming an insulating layer on the catalytic metal layer, and forming a contact hole through the insulating layer to expose a portion of the catalytic metal layer;
• (c) supplying a carbon-containing gas onto the catalytic metal layer through the contact hole to grow a carbon nanotube, which forms the conductive line, on the catalytic metal layer;
• and
• (d) forming a memory thin film on the insulating layer, the memory thin film being electrically connected to the carbon nanotube and being made of a phase-change material.

A semiconductor device, comprising:

• a substrate;
• a first electrode formed on the substrate;
• a catalytic metal layer formed on a surface of the electrode;
• an insulating layer, which is formed on the catalytic metal layer, having a
• contact hole therethrough to expose a portion of the catalytic metal layer;
• a carbon nanotube, which is grown on the catalytic metal layer in the contact hole and forms a conductive line as a pathway for electron migration;
• and
• a memory thin film on the insulating layer and electrically connected to the carbon nanotube, wherein the memory thin film is made of a phase-change material.