Semiconductor devices having a field effect transistor and methods of fabricating the same

A semiconductor device, comprising:

• a device active pattern disposed on a predetermined region of a substrate,
• a gate electrode crossing over a top surface of to device active pattern, having a gate insulation layer interposed between the gate electrode and to device active pattern;
• a device isolation layer disposed between to substrate and a portion of to gate electrode at both sides of to device active pattern;
• a source/drain region formed into device active pattern at both sides of the gate electrode;
• a support pattern disposed under to gate electrode between the device active pattern and the substrate;
• and
• a filling insulation pattern disposed under to source/drain region between to device active pattern and the substrate,
• wherein the device active pattern arranged under the gate electrode comprises a strained silicon having a lattice width wider than a silicon lattice.

A semiconductor device, comprising:

• a pin-type device active pattern disposed on a predetermined region of a substrate;
• a gate electrode surrounding a top surface and both sidewalls of the pin-type device active pattern, crossing over the pin-type device active pattern, having a gate insulation layer interposed therebetween;
• a source/drain region formed on the pin-type device active pattern at both sides of the gate electrode;
• a support pattern disposed under the gate electrode between the pin-type device active pattern and the substrate;
• and
• a filling insulation pattern disposed under the source/drain region between the pin-type device active pattern and the substrate,
• wherein the pin-type device active pattern under the gate electrode comprises a strained silicon having a lattice width wider than a silicon lattice.