Imaging array utilizing thyristor-based pixel elements
OwnerGeoff W. Taylorinventor
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Abstract
An improved imaging array (and corresponding method of operation) includes a plurality of heterojunction thyristor-based pixel elements disposed within resonant cavities formed on a substrate. Each thyristor-based pixel element includes complementary n-type and p-type modulation doped quantum well interfaces that are spaced apart from one another. Incident radiation within a predetermined wavelength resonates within the cavity of a given pixel element for absorption therein that causes charge accumulation. The accumulated charge is related to the intensity of the incident radiation. The heterojunction-thyristor-based pixel element is suitable for many imaging applications, including CCD-based imaging arrays and active-pixel imaging arrays.
Claims26
An imaging device comprising:
- a plurality of pixel elements, each pixel element including complementary first-type and second-type modulation doped quantum well interfaces that are formed in a resonant cavity on a substrate and that are spaced apart from one another, wherein electromagnetic radiation within a predetermined wavelength range is received at said pixel element and injected into said resonant cavity thereby generating charge that is accumulated in said second-type modulation doped quantum well interface for said pixel element.
Dependencies are inferred from the claim text.