Group III nitride compound semiconductor light-emitting element
AssigneeToyoda Gosei Co., Ltd.
InventorsNaoki Shibata, Takahiro Kozawa
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Abstract
A photo-excited semiconductor layer smaller in band gap energy than a light-emitting layer made of a Group III nitride compound semiconductor is provided between a substrate and the light-emitting layer. The photo-excited semiconductor layer is excited by the light emitted from the light-emitting layer to thereby emit light at a wavelength longer than that of the light emitted from the light-emitting layer.
Claims33
A Group III nitride compound semiconductor light-emitting element comprising:
- a substrate;
- a light-emitting layer comprising a Group III nitride compound semiconductor;
- and
- at least one photo-excited semiconductor layer comprising a doped Group III nitride compound semiconductor that is excited by light emitted from said light-emitting layer to thereby emit light at a wavelength longer than that of said light emitted from said light-emitting layer,
- wherein a plurality of photo-excited semiconductor layers are provided as said at least one photo-excited semiconductor layer, said plurality of photo-excited semiconductor layers comprising at least one layer of n-type AlGaN and at least one layer of n-type InGaN.
A Group III nitride compound semiconductor light-emitting element comprising:
- a substrate;
- a light-emitting layer comprising a Group III nitride compound semiconductor;
- and
- at least one photo-excited semiconductor layer comprising a doped Group III nitride compound semiconductor that is excited by light emitted from said light-emitting layer to thereby emit light at a wavelength longer than that of said light emitted from said light-emitting layer;
- wherein said photo-excited semiconductor layer comprises InxAlyGa1−x−yN (0<x<1, 0<y<1, 0<x+y<1, y<x) doped with n-type impurities.
A Group III nitride compound semiconductor light-emitting element comprising:
- a substrate;
- a light-emitting layer comprising a Group III nitride compound semiconductor;
- and
- at least one photo-excited semiconductor layer comprising a doped Group III nitride compound semiconductor that is excited by light emitted from said light-emitting layer to thereby emit light at a wavelength longer than that of said light emitted from said light-emitting layer,
- wherein said photo-excited semiconductor layer comprises InaGa1−aN (0<a<1) doped with n-type impurities.
A Group III nitride compound semiconductor light-emitting element comprising:
- a substrate;
- a light-emitting layer comprising a Group III nitride compound semiconductor;
- a doped Group III nitride compound semiconductor layer having band gap energy smaller than that of said light-emitting layer;
- and
- a plurality of photo-excited semiconductor layers which comprise at least one layer of n-type AlGaN and at least one layer of n-type InGaN,
- wherein said Group III nitride compound semiconductor layer is excited by light emitted front said light-emitting layer.
A method of making a Group III nitride compound semiconductor light-emitting element comprising:
- forming a light-emitting layer, comprising a Group III nitride compound semiconductor, on a substrate;
- and
- forming at least one photo-excited semiconductor layer above or below said substrate,
- wherein said at least one photo-excited semiconductor layer comprises a doped Group III nitride compound semiconductor that is excited by light emitted from said light-emitting layer to thereby emit light at a wavelength longer than that of said light emitted from said light-emitting layer, and
- wherein said forming at least one photo-excited semiconductor layer comprises forming a plurality of photo-excited semiconductor layers which comprise at least one layer of n-type AIGaN and at least one layer of n-type InGaN.
Dependencies are inferred from the claim text.