Back to results
US 7,247,882 B2Granted
Display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama, Setsuo Nakajima, Naoya Sakamoto
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second gate insulation film and a gate electrode, which are formed on a substrate, wherein an arbitrary voltage is applied to the back gate electrode.
Claims36
A display device comprising:
- a first conductive layer over a substrate;
- a first insulating film over the first conductive layer;
- a polycrystalline silicon film over the first insulating film, said polycrystalline silicon film having a source region, a drain region, low concentration impurity regions and a channel formation region;
- a second insulating film over the polycrystalline silicon film;
- a second conductive layer over the channel formation region with the second insulating film interposed between the second conductive layer and the channel formation region;
- and
- a third insulating film over the second conductive layer,
- wherein each of the low concentration impurity regions partially overlaps the first conductive layer and extends beyond an edge of the first conductive layer, and is not overlapped by the second conductive layer, and
- wherein the third insulating film has planarity.
6 more elements
A display device comprising:
- a first conductive layer over a substrate;
- a first insulating film over the first conductive layer;
- a polycrystalline silicon film over the first insulating film, said polycrystalline silicon film having a source region, a drain region, low concentration impurity regions and a channel formation region;
- a second insulating film over the polycrystalline silicon film;
- a second conductive layer comprising aluminum over the channel formation ion with the second insulating film interposed between the second conductive layer and the channel formation region;
- and
- a third insulating film over the second conductive layer,
- wherein each of the low concentration impurity regions partially overlaps the first conductive layer and extends beyond an edge of the first conductive layer, and is not overlapped by the second conductive layer, and
- wherein the third insulating film has planarity.
6 more elements
A display device comprising:
- a first conductive layer over a substrate;
- a first insulating film over the first conductive layer;
- a polycrystalline silicon film over the first insulating film, said polycrystalline silicon film having a source region, a drain region, low concentration impurity regions and a channel formation region;
- a second insulating film over the polycrystalline silicon film;
- a second conductive layer over the channel formation region with the second insulating film interposed between the second conductive layer and the channel formation region;
- and
- a third insulating film over the second conductive layer,
- wherein each of the low concentration impurity regions partially overlaps the first conductive layer and extends beyond an edge of the first conductive layer, and is not overlapped by the second conductive layer.
5 more elements
A display device comprising:
- a first conductive layer over a substrate;
- a first insulating film over the first conductive layer;
- a polycrystalline silicon film over the first insulating film, said polycrystalline silicon film having a source region, a drain region, low concentration impurity regions and a channel formation region;
- a second insulating film over the polycrystalline silicon film;
- a second conductive layer over the channel formation region with the second insulating film interposed between the second conductive layer and the channel formation region;
- a third insulating film over the second conductive layer;
- and
- a pixel electrode over the third insulating film,
- wherein each of the low concentration impurity regions partially overlaps the first conductive layer and extends beyond an edge of the first conductive layer, and is not overlapped by the second conductive layer.
6 more elements
Dependencies are inferred from the claim text.