Back to results
US 7,247,880 B2Granted
Thin film transistor with low angle grain boundaries in a channel layer
AssigneeSamsung SDI Co., Ltd.
InventorsByoung-Keon Park, Ki-Yong Lee, Jin-Wook Seo, Tae-Hoon Yang
Life of this patent
Estimating the term…
Abstract
A thin film transistor includes a substrate, a semiconductor layer pattern on the substrate, a gate insulating layer on the semiconductor layer pattern, and a gate electrode on a gate insulating layer. Low angle grain boundaries of polysilicon formed in a channel layer in the semiconductor layer pattern are tilted −15 to 15° with respect to a current flowing direction.
Claims5
A thin film transistor comprising:
- a substrate;
- a semiconductor layer pattern formed on the substrate;
- a gate insulating layer formed on the semiconductor layer pattern;
- and
- a gate electrode formed on the gate insulating layer,
- wherein low angle grain boundaries of polysilicon formed in a channel layer in the semiconductor layer pattern are tilted −15 to 15° with respect to a current flowing direction.
3 more elements
Dependencies are inferred from the claim text.