Crystallization apparatus using pulsed laser beam

A processing apparatus using a pulsed laser beam, comprising:

• a laser beam source which emits a pulsed laser beam;
• a homogenizer optical system which homogenizes an intensity of the laser beam emitted from the laser beam source in a two-dimensional plane;
• processing section for irradiating a processing target with the homogenized laser beam to subject the processing target to laser processing;
• a storing section for storing a position of the processing target irradiated by the processing section;
• an optical monitoring portion which optically monitors a processing state of an irradiation position in accordance with the pulsed laser beam emitted from the laser beam source;
• first mechanism for irradiating a next irradiation position of the processing target with the pulsed laser beam when it is detennined that a processing state is a predetermined state which is normal as a result of the monitoring;
• and
• second mechanism for returning to and again irradiating a non-normal processing position of the processing target stored in the storing section with the laser beam from the laser beam source when it is determined that a processing state is not a predetermined state which is non-normal as a result of the monitoring.

A laser crystallization apparatus which irradiates a non-single-crystal semiconductor film with a laser beam emitted from a laser which performs pulsed oscillation to thereby carry out crystallization, having:

• a laser beam source which performs pulsed oscillation with respect to the laser beam;
• a homogenizer optical system which is provided in a laser optical path from the laser beam source, and homogenizes an intensity of the laser beam in a two-dimensional space;
• an optical element which is provided in a laser optical path from the homogenizer optical system, and forms a light intensity gradient in the homogenized laser beam;
• a sample stage which is provided in a laser optical path from the optical element, on which a non-single-crystal semiconductor film, whose light receiving region is at least partially melted when the laser beam is received, is mounted thereon, and which is configured to move to a predetermined other light receiving region;
• laser beam detecting section for detecting the laser beam;
• and
• a computer which compares a detection value detected by the laser beam detecting section with the predetermined set value necessary for crystallization, stores irradiation position information of the non-single-crystal semiconductor film as abnormal shot position information when the detection value does not fall within a range of the set value, reads the abnormal shot position information when another light receiving region is irradiated with the laser beam and laser beam irradiation of the non-single-crystal semiconductor film is terminated, and again issues a laser beam irradiation command to the laser beam source to irradiate the abnormal shot position.