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US 7,247,580 B2Granted
Devices and methods of preventing plasma charging damage in semiconductor devices
AssigneeDongbu Electronics Co., Ltd.
InventorJae Hee Kim
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Abstract
Methods for protecting semiconductor devices from plasma charging damage are disclosed. An example disclosed method includes depositing an etching stop layer on a substrate with at least one predetermined structure; depositing a premetallic dielectric layer and a charge preservation layer on the entire surface of the etching stop layer; depositing an insulating layer on the surface of the resulting structure; and forming an metallic interconnect on the insulating layer.
Claims7
A method for preventing plasma charging damages comprising:
- sequentially forming a gate insulating layer, a gate electrode, and a source and drain region on a substrate;
- depositing an etching stop layer on the substrate;
- depositing a premetallic dielectric layer and a charge preservation layer on the entire surface of the etching stop layer, wherein the charge preservation layer comprises polysilicon;
- depositing an insulating layer on the surface of the resulting structure;
- and
- forming an metallic interconnect on the insulating layer.
3 more elements
Dependencies are inferred from the claim text.