Method for fabricating a capacitor using a metal insulator metal structure
AssigneeDongbu Electronics Co., Ltd.
InventorBo-Yeoun Jo
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Abstract
A method for fabricating a capacitor using a metal/insulator/metal (MIM) structure is disclosed. An example method for fabricating a capacitor using an MIM structure including a first metal layer, a dielectric layer, and a second metal layer etches the second metal layer and the dielectric layer in order and changes the etching conditions associated with the second metal layer prior to etching the dielectric layer.
Claims14
A method for fabricating a capacitor in a metal/insulator/metal structure including a first metal layer, a dielectric layer comprising a nitride, and a second metal layer comprising Ti and TiN in order, the method comprising:
- forming a photoresist pattern on the second metal layer;
- etching the second metal layer with a gas mixture consisting essentially of Cl2, CHF3 and Ar in a ratio of 5:1:5, using the photoresist pattern as a mask;
- and
- etching the dielectric layer with a gas mixture consisting essentially of Cl2 and Ar in a ratio of 1 to 2, using the photoresist pattern as the mask, to leave a residual dielectric layer over the first metal layer in an etched part of the dielectric layer.
Dependencies are inferred from the claim text.