Silicon carbide-based device contact and contact fabrication method
AssigneeTeledyne Licensing, LLC
InventorQingchun Zhang
Life of this patent
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Abstract
A silicon carbide-based device contact and contact fabrication method employ a layer of poly-silicon on a SiC substrate, with the contact's metal layer deposited on top of the poly-silicon. Both Schottky and ohmic contacts can be formed. The poly-silicon layer can be continuous or patterned, and can be undoped or doped to be n-type or p-type. The present contact and method provide excellent contact adhesion, and can be employed with a number of different device types, to provide electrical contacts for Schottky diodes, pn diodes, and transistors, for example.
Claims18
A method of forming an electrical contact which conducts the DC operating current of a device formed on a silicon carbide (SiC) substrate, comprising:
- providing a SiC substrate;
- depositing a layer of poly-silicon on said SiC substrate;
- and
- depositing a layer of metal on said poly-silicon layer such that an electrical contact which conducts the DC operating current of a device formed on said SiC substrate is formed between said metal layer and said SiC substrate via said poly-silicon layer.
A method of forming an ohmic contact which conducts the DC operating current of a device formed on a silicon carbide (SiC) substrate, comprising:
- providing a SiC substrate;
- doping a region of said SiC substrate with an n-type or p-type dopant;
- activating said n-type or p-type dopant material;
- depositing a layer of poly-silicon on said SiC substrate;
- depositing a layer of metal on said poly-silicon layer;
- and
- annealing said SiC substrate such that an ohmic contact which conducts the DC operating current of a device formed on said SiC substrate is formed between said metal layer and said SiC substrate via said poly-silicon layer.
A method of forming a Schottky contact which conducts the DC operating current of a device formed on a silicon carbide (SiC) substrate, comprising:
- providing a SiC substrate;
- depositing a layer of poly-silicon on said SiC substrate;
- and
- depositing a layer of a Schottky barrier metal on said poly-silicon layer such that an electrical contact which conducts the DC operating current of a device formed on said SiC substrate is formed between said metal layer and said SiC substrate via said poly-silicon layer.
A method of forming an electrical contact which conducts the DC operating current of a device formed on a silicon carbide (SiC) substrate, comprising:
- providing a SiC substrate;
- depositing a layer of poly-silicon on said SiC substrate;
- patterning said poly-silicon layer to form periodically-spaced poly-silicon features on said SiC substrate;
- and
- depositing a layer of metal on said poly-silicon layer such that an electrical contact which conducts the DC operating current of a device formed on said SiC substrate is formed between said metal layer and said SiC substrate via said poly-silicon layer, and between said metal layer and said SiC substrate directly in the spaces between said poly-silicon features.
Dependencies are inferred from the claim text.