Method of manufacturing a semiconductor memory device including a transistor
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-Woo Lee, Cheol-Ju Yun, Hyeoung-Won Seo
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Abstract
A semiconductor device comprises a plurality of gate structures formed on a substrate, a gate spacer formed on a sidewall of the gate structures, a semiconductor pattern formed on the substrate between the gate structures, a first impurity region and a second impurity region formed in the semiconductor pattern and at surface portions of the substrate, respectively, wherein the first and second impurity regions include a first conductive type impurity, and a channel doping region surrounding the first impurity region, wherein the channel doping region includes a second conductive type impurity.
Claims7
A method of manufacturing a semiconductor device, comprising:
- forming a plurality of gate structures on a substrate;
- forming a gate spacer on a sidewall of each gate structure;
- forming a semiconductor pattern on exposed portions of the substrate between the gate spacers;
- forming a channel doping region in the substrate between predetermined adjacent gate spacers by implanting a second conductive type impurity onto the semiconductor pattern;
- and
- forming a first impurity region and a second impurity region in the semiconductor pattern and at surface portions of the substrate by implanting a first conductive type impurity onto the semiconductor pattern, wherein the first impurity region is surrounded by the channel doping region.
Dependencies are inferred from the claim text.