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US 7,247,536 B2Granted
Vertical DRAM device with self-aligned upper trench shaping
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Ramachandra Divakaruni, Chun-Yung Sung
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Abstract
A method and structure for a memory storage cell in a semiconductor substrate includes forming a dopant source material over a lower portion of a deep trench formed in the substrate. An upper portion of the trench is shaped to a generally rectangular configuration, and the dopant source material is annealed so as to form a buried plate of a trench capacitor. The buried plate is self aligned to the shaped upper portion of the trench.
Claims18
A semiconductor structure, comprising:
- a trench initially formed in a semiconductor substrate;
- an upper portion of said trench being reshaped to have a generally rectangular shape following the initial formation thereof;
- and
- a doped lower portion of said trench self aligned with respect to said reshaped upper portion of said trench.
1 more element
A semiconductor memory cell, comprising:
- a trench initially formed in a semiconductor substrate;
- a buried plate region formed in a lower portion of said trench;
- and
- an upper portion of said trench being reshaped to have a generally rectangular shape following the initial formation thereof;
- wherein said buried plate region is self aligned with said reshaped upper portion of said trench.
2 more elements
Dependencies are inferred from the claim text.