Semiconductor device and method for manufacturing same
AssigneeRohm Co., Ltd.
InventorKazutaka Shibata
Life of this patent
Estimating the term…
Abstract
There is provided a semiconductor device of a chip-on-chip structure having a support semiconductor chip, first and second chip blocks supported and connected on one surface of the support semiconductor chip and an insulator arranged between the first and second chip blocks. The first and second chip blocks each include one or a plurality of semiconductor chips having an active surface nearly parallel with the one surface of the support semiconductor chip. Within the insulator, an intralevel wiring is arranged on a wiring plane as a plane including an inactive or active surface of any of the semiconductor chips structuring the first or second chip block.
Claims11
A method for manufacturing a semiconductor device including:
- a step of connecting, to one surface of a support semiconductor chip, first and second chip blocks each including one or a plurality of semiconductor chips having an active surface substantially parallel with the one surface of the support semiconductor chip;
- a step of arranging an insulator between the first and second chip blocks;
- and
- a step of forming, within or on a surface of the insulator, an intralevel wiring on a wiring plane as a plane including an inactive or active surface of any of the semiconductor chips constituting the first or second chip block.
A method for manufacturing a semiconductor device including:
- an on-substrate connecting step of connecting face down a semiconductor chip having an active surface with a recess and a conductor disposed in the recess onto one surface of a semiconductor substrate;
- and
- a step of polishing or abrading an inactive surface of the semiconductor chip to expose the conductor at the inactive surface of the semiconductor chip after the on-substrate connecting step,
- wherein the semiconductor substrate is a semiconductor wafer, wherein the semiconductor chip is a first semiconductor chip, wherein the on-substrate connecting step comprises arranging and connecting the first semiconductor chip and a second semiconductor chip side by side on the semiconductor wafer, and further including a step of cutting the semiconductor wafer based on a predetermined region that includes at least one of the first and second semiconductor chips to obtain a semiconductor device having a chip-on-chip structure.
A method for manufacturing a semiconductor device including:
- an on-substrate connecting step of connecting face down a semiconductor chip having an active surface with a recess and a conductor disposed in the recess onto one surface of a semiconductor substrate;
- and
- a step of polishing or abrading an inactive surface of the semiconductor chip to expose the conductor at the inactive surface of the semiconductor chip after the on-substrate connecting step,
- wherein the one surface of the semiconductor substrate is an active surface, and further including a substrate polish step of polishing or abrading the inactive surface of the semiconductor substrate to reduce the thickness thereof.
Dependencies are inferred from the claim text.