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US 7,247,514 B2Granted
Semiconductor device and method for producing the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKeiji Yamane, Tetsuo Ueda, Takashi Miyamoto, Isao Kidoguchi
Life of this patent
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Abstract
A method for producing a semiconductor device of the present invention includes forming a surface electrode on a semiconductor element, forming a solder layer by plating on one principal surface of the surface electrode, mounting the semiconductor element on the sub-mount so that the solder layer contacts a principal surface of the sub-mount, and bonding the sub-mount and the semiconductor element to each other via the solder layer.
Claims29
A method for producing a semiconductor device, comprising:
- forming a surface electrode on a semiconductor element;
- forming a solder layer by plating on one principal surface of the surface electrode;
- placing the semiconductor element on a sub-mount so that the solder layer contacts a principal surface of the sub-mount;
- and
- bonding the sub-mount and the semiconductor element to each other via the solder layer,
- wherein the solder layer is partially formed on the surface electrode, the surface electrode has an exposed portion, and before mounting the semiconductor element on the sub-mount, a covering layer having a flatness different from that of the surface electrode is formed on the solder layer.
3 more elements
A method for producing a semiconductor device, comprising:
- forming a surface electrode on a semiconductor element;
- forming a solder layer by plating on one principal surface of the surface electrode;
- placing the semiconductor element on a sub-mount so that the solder layer contacts a principal surface of the sub-mount;
- bonding the sub-mount and the semiconductor element to each other via the solder layer;
- and
- bonding a base and the sub-mount to each other via a solder layer for a base, before mounting the semiconductor element on the sub-mount,
- wherein the solder layer for a base is formed on one of the sub-mount and the base,
- a plating layer containing Au is formed on the other of the sub-mount and the base in a case where the solder layer for a base contains an alloy of Au and Sn, and a plating layer containing Ag is formed on the other of the sub-mount and the base in a case where the solder layer for a base contains an alloy of Ag and Sn, and
- in order to bond the base and the sub-mount to each other, heating is performed so that the solder layer for a base and the plating layer are melted.
6 more elements
A method for producing a semiconductor device, comprising:
- forming a surface electrode on a semiconductor element;
- forming a solder layer by plating on one principal surface of the surface electrode;
- placing the semiconductor element on a sub-mount so that the solder layer contacts a principal surface of the sub-mount;
- bonding the sub-mount and the semiconductor element to each other via the solder layer;
- and
- bonding a base and the sub-mount to each other via a solder layer for a base, after bonding the sub-mount and the semiconductor element to each other via the solder layer,
- wherein the solder layer for a base is formed on one of the sub-mount and the base,
- a plating layer containing Au is formed on the other of the sub-mount and the base in a case where the solder layer for a base contains an alloy of Au and Sn, and a plating layer containing Ag is formed on the other of the sub-mount and the base in a case where the solder layer for a base contains an alloy of Ag and Sn, and
- in order to bond the base and the sub-mount to each other, heating is performed so that the solder layer for a base and the plating layer are melted.
6 more elements
A method for producing a semiconductor device, comprising:
- forming a surface electrode on a semiconductor element;
- forming a solder layer by plating on one principal surface of the surface electrode;
- placing the semiconductor element on a sub-mount so that the solder layer contacts a principal surface of the sub-mount;
- and
- bonding the sub-mount and the semiconductor element to each other via the solder layer,
- wherein the solder layer is partially formed on the surface electrode, the surface electrode has an exposed portion, and before mounting the semiconductor element on the sub-mount, a covering layer having a flatness different from that of the surface electrode is formed on the solder layer, and
- wherein an entire region for forming the solder layer on the surface electrode is inside of the principal surface of the semiconductor element where the surface electrode is formed.
4 more elements
Dependencies are inferred from the claim text.