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US 7,247,513 B2Granted
Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
AssigneeCaracal, Inc.
InventorOlof Claes Erik Kordina
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Abstract
A method of forming a layer of silicon carbide wherein silicon clusters are dissociated in a gas phase. Silicon clusters may be dissociated by a silicon-etching gas such as a group VII-containing component. A semiconductor device is also disclosed having a layer formed by the methods of the invention.
Claims44
A homo-epitaxial growth method of forming a silicon carbide layer comprising:
- dissociating silicon clusters in a gas phase by introducing a dissociation enhancer into a silicon carbide precursor stream in addition to the silicon carbide precursors.
A homo-epitaxial growth method of forming a silicon carbide layer comprising:
- dissociating silicon clusters in a gas phase:
- introducing one or more chlorosilanes and one or more hydrocarbons in the hot zone of a growth chamber, wherein the hot zone is at a temperature in a range of about 1100° C. to about 1500° C.
Dependencies are inferred from the claim text.