Method for producing magnetic memory device

A method for producing a magnetic memory device, the method comprising:

• forming a magnetoresistive effect element;
• forming a first layer of insulating material so as to cover the magnetoresistive effect element;
• forming a second layer so as to cover the first layer;
• flattening a stacked film formed of the second layer and the first layer to expose a top face of the magnetoresistive effect element;
• forming an upper writing line, which is electrically connected to the top face of the magnetoresistive effect element, overlying the magnetoresistive effect element;
• etching the second layer to expose the first layer on a side portion of the magnetoresistive effect element;
• and
• forming a yoke structural member, after forming the upper writing line and after exposing the first layer, so as to cover at least a side portion of the upper writing line and the side portion of the magnetoresistive effect element to sandwich the exposed first layer between the yoke structural member and the side portion of the magnetoresistive effect element.

A method for producing a magnetic memory device, the method comprising:

• forming a selecting transistor on a semiconductor substrate;
• forming a lower writing line;
• forming a magnetoresistive effect element, a bottom end of which is electrically connected to the lower writing line, on the lower writing line;
• forming a first layer of insulating material so as to cover the magnetoresistive effect element;
• forming a second layer so as to cover the first layer;
• flattening a stacked film formed of the second layer and the first layer to expose a top face of the magnetoresistive effect element;
• etching the second layer so that a surface of the second layer is lower than the top face of the magnetoresistive effect element;
• forming a connecting line which is electrically connected to one of a source and drain of the selecting transistor via a connecting plug and which is electrically connected to the top face of the magnetoresistive effect element;
• forming a third layer serving as an interlayer dielectric layer so as to cover the connecting line;
• forming an upper writing line, which crosses the lower writing line, on the third layer so as to cover the connecting line;
• partially removing the third layer to allow the third layer to remain below the upper writing line and around the connecting line;
• etching the second layer to expose the first layer on a side portion of the magnetoresistive effect element;
• and
• forming a yoke structural member, after forming the upper writing line and after exposing the first layer, so as to cover at least a side portion of the upper writing line and the side portion of the magnetoresistive effect element to sandwich the exposed first layer between the yoke structural member and the side portion of the magnetoresistive effect element.