Method of laser annealing to form an epitaxial growth layer
AssigneeMacronix International Co., Ltd.
InventorsSheng C. Lai, Ruichen Liu
Life of this patent
Estimating the term…
Abstract
A method for forming an epitaxial layer in a capacitor over interconnect structure, includes selecting a laser having a suitable wavelength for absorption at a seeding layer/annealing layer interface of the capacitor over interconnect structure, and directing laser energy from the selected laser at the capacitor over interconnect structure. The laser energy anneals a feature of the capacitor over interconnect structure to form an epitaxial layer. The annealing is accomplished at a temperature below about 450° C. The selected laser can be an excimer laser using a pulse extender. The capacitor over interconnect structure can be a ferroelectric capacitor formed over a conventional CMOS structure.
Claims18
A method for forming an epitaxial layer over a seeding layer in a capacitor being formed over an interconnect structure, comprising:
- providing the seeding layer and an annealing layer of the capacitor being formed over the interconnect structure, wherein the annealing layer is in an amorphous phase and is disposed over the seeding layer, and a seeding layer/annealing layer interface is defined between the seeding layer and the annealing layer;
- selecting a laser having a desired wavelength for maximum absorption at the seeding layer/annealing layer interface of the capacitor being formed over the interconnect structure;
- and
- directing laser energy from the selected laser at the annealing layer of the capacitor being formed over the interconnect structure,
- wherein the laser energy is directed at the annealing layer of the capacitor being formed over the interconnect structure until the annealing layer of the capacitor being formed over the interconnect structure is annealed from the amorphous phase to form an epitaxial layer over the seeding layer in one single step.
A method of making a capacitor over an interconnect (COI structure, comprising:
- providing an interconnect structure;
- and
- fabricating a ferroelectric capacitor disposed over the interconnect structure, the fabricating including the processes of:
- providing a seeding layer and an annealing layer over the seeding layer with a seeding layer/annealing layer interface defined between the seeding layer and the annealing layer, wherein the annealing layer is in an amorphous phase;
- selecting a laser having a desired wavelength for maximum absorption at the seeding layer/annealing layer interface of the ferroelectric capacitor;
- and
- directing laser energy from the selected laser at the annealing layer, the laser energy being directed at the annealing layer until the annealing layer is annealed from the amorphous phase to form an epitaxial layer over the seeding layer in one single step.
A method for forming an epitaxial layer over a seeding layer in a capacitor being formed over an interconnect structure, comprising:
- selecting a laser having a desired wavelength for maximum absorption at a seeding layer/annealing layer interface of the capacitor being formed over the interconnect structure, wherein the seeding layer/annealing layer interface is defined between the seeding layer and an annealing layer disposed over the seeding layer of the capacitor being formed, and the annealing layer is in an amorphous phase;
- and
- directing laser energy from the selected laser at the capacitor being formed over the interconnect structure to heat the seeding layer/annealing layer interface during the forming of the capacitor being formed over the interconnect structure,
- wherein the laser energy anneals the annealing layer over the seeding layer of the capacitor being formed over the interconnect structure from the amorphous phase to form an epitaxial layer over the seeding layer in one single step.
Dependencies are inferred from the claim text.