Image display device
AssigneeHitachi Displays, Ltd.
InventorsTakeo Shiba, Motoyasu Terao, Hideyuki Matsuoka
Life of this patent
Estimating the term…
Abstract
The image display device has a display section formed of plural pixels and a control section which controls the display section, and is provided with nonvolatile phase-change type pixel memories in respective ones of the pixels, or is provided with a nonvolatile phase-change type frame memory in the control section. Each of the nonvolatile phase-change type pixel memories is formed of one or more switches and a variable-resistance memory element fabricated from a chalcogenide material for storing display data for at least a specified period of time. The nonvolatile phase-change type frame memory is formed of one or more switches and a variable-resistance memory element fabricated from a chalcogenide material for retaining display data for one frame.
Claims19
An image display device comprising a display section comprised of a plurality of pixels;
- and a control section which controls said display section, wherein said image display device includes a nonvolatile phase-change type memory device having a memory for image display which is comprised of phase-change device elements and TFTs each having only a drain electrode connected to a corresponding one of the phase-change device elements, and said nonvolatile phase-change type memory device is comprised of at least one variable-resistance memory element and at least one TFT, wherein said at least one variable-resistance memory element is comprised of a chalcogenide material containing at least one element of Te, Se and S, and wherein a resistance of said at least one TFT in a conducting state thereof is in a range of from 10 kΩ to 500 kΩ and a resistance of said at least one variable-resistance memory element in a high-resistance state thereof is 1000 kΩ or more.
An image display device comprising a display section comprised of a plurality of pixels;
- and a control section which controls said display section, wherein said image display device includes a nonvolatile phase-change type memory device having a memory for image display which is comprised of phase-change device elements and TFTs, and said nonvolatile phase-change type memory device is comprised of combinations of memory cells, each of said memory cells is comprised of one variable-resistance memory element and one TFT having only a drain electrode connected to said one variable-resistance memory element, and retains display data represented by one bit or more, wherein said at least one variable-resistance memory element is comprised of a chalcogenide material containing at least one element of Te, Se and S, and wherein a resistance of said at least one TFT in a conducting state thereof is in a range of from 10 kΩ to 500 kΩ and a resistance of said at least one variable-resistance memory element in a high-resistance state thereof is 1000 kΩ or more.
Dependencies are inferred from the claim text.