Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal

A polishing composition for chemical mechanical planarization of a substrate comprised of metal and dielectric material, comprising:

• A) an abrasive;
• and
• B) a hybrid organic/inorganic particle dispersed in an aqueous medium, wherein the hybrid organic/inorganic particle is physically independent of the abrasive, wherein the hybrid organic/inorganic particle is a silicone particle;
• and wherein the polishing composition affords a selectivity for removal of metal relative to dielectric from said substrate of at least 10:1;
• wherein the hybrid organic/inorganic particle is a silicone particle having an average diameter from 0.1 microns to 0.7 microns.

A polishing composition for chemical mechanical planarization of a substrate comprised of metal and dielectric material, comprising:

• A) an abrasive;
• and
• B) a hybrid organic/inorganic particle dispersed in an aqueous medium, wherein the hybrid organic/inorganic particle is neither covalently bonded to nor coated on the abrasive, wherein the hybrid organic/inorganic particle is a silicone particle;
• and wherein the polishing composition affords a selectivity for removal of metal relative to dielectric from said substrate of at least 10:1;
• wherein the hybrid organic/inorganic particle is a silicone particle having an average diameter from 0.1 microns to 0.7 microns.

A polishing composition for chemical mechanical planarization of a substrate comprised of tungsten and dielectric material, comprising:

• A) an abrasive;
• B) an alkyne compound having at least one free hydroxyl substituent;
• C) ammonium fluoride;
• and
• D) periodic acid;
• wherein the polishing composition affords a selectivity for removal of tungsten relative to dielectric from said substrate of at least 10:1;
• wherein the alkyne compound having at least one free hydroxyl substituent has no ethoxylated portion.