Methods for reducing delamination during chemical mechanical polishing

A method for processing a substrate having a conductive material and a barrier material formed thereon, comprising:

• polishing the conductive material, wherein the polishing the conductive material comprises:
• positioning the substrate in a polishing apparatus having a first rotational carrier head and a first rotatable platen, wherein the substrate is disposed in the first rotational carrier head and the first platen has a polishing article disposed thereon,
• rotating the first carrier head at a first carrier head rotational rate and rotating the first platen at a first platen rotational rate,
• contacting the substrate with the polishing article,
• accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and
• removing the conductive material from the substrate;
• and
• polishing the barrier material, wherein the polishing the barrier material comprises:
• positioning the substrate on a second rotational carrier head opposite a second platen having a second polishing article disposed thereon;
• rotating the second carrier head at a fourth carrier head rotational rate and rotating the second platen at a fourth platen rotational rate,
• contacting the substrate with the second polishing article,
• accelerating the fourth carrier head rotational rate to a fifth carrier head rotational rate and accelerating the fourth platen rotational rate to a fifth platen rotational rate, and
• removing the barrier material from the substrate.