US 7,238,972 B2 · Photodetector

Abstract

A photodetector is described. The photodetector is comprised of a substrate, a first n-type III-V compound semiconductor layer located on the substrate, an n++-type III-V compound semiconductor layer located on a first portion of the first n-type III-V compound semiconductor layer with a second portion of the first n-type III-V compound semiconductor layer exposed, a p-type III-V compound semiconductor layer located on the n++-type compound semiconductor layer, an undoped III-V compound semiconductor layer located on the p-type III-V compound semiconductor layer, a second n-type III-V compound semiconductor layer located on the undoped III-V compound semiconductor layer, a conductive transparent oxide layer located on the second n-type III-V compound semiconductor layer, a first electrode located on a portion of the conductive transparent oxide layer, and a second electrode located on a portion of the second portion of the first n-type III-V compound semiconductor layer.

Claims31

Dependent claims

A photodetector, comprising:

a substrate;
an n-type III-V compound semiconductor layer located on the substrate;
an undoped III-V compound semiconductor layer located on a first portion of the n-type III-V compound semiconductor layer, and a second portion of the n-type III-V compound semiconductor layer is exposed;
a p-type III-V compound semiconductor layer located on the undoped III-V compound semiconductor layer;
a strained layer superlattice structure located on the p-type III-V compound semiconductor layer;
a transparent conductive layer located on the strained layer superlattice structure;
a p-type electrode located on a portion of the transparent conductive layer;
and
an n-type electrode located on a portion of the second portion of the n-type III-V compound semiconductor layer.

6 more elements

Dependencies are inferred from the claim text.

Photodetector

Life of this patent

Photodetector

Life of this patent

Abstract

Claims31