Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
AssigneeHynix Semiconductor Inc.
InventorsSung Koo Lee, Jae Chang Jung, Geun Su Lee, Ki-Soo Shin
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Abstract
A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.
Claims16
A process of forming photoresist patterns comprising:
- (a) forming a bottom anti-reflective coating film by coating and baking a bottom anti-reflective coating composition on an underlying layer;
- (b) forming a photoresist film by coating and baking a photoresist composition on the bottom anti-reflective coating film;
- (c) exposing the resultant structure;
- (d) baking the resultant structure;
- and
- (e) developing the resultant structure to obtain ultra fine patterns,
- wherein the bottom anti-reflective coating composition comprises a polyvinylphenol base resin of Formula 2, a curing agent compound of Formula 1, a solvent, and an acid generator;
- wherein R1 and R2 are linear or branched C1-C10 alkyl, and R3 is hydrogen or methyl;
Dependencies are inferred from the claim text.