Method of cleaning CVD equipment processing chamber
AssigneeASM Japan K.K.
InventorsHirofumi Arai, Hideaki Fukuda
Life of this patent
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Abstract
A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises supplying cleaning gas to the remote plasma-discharge device; activating the cleaning gas inside the remote plasma-discharge device; and bringing the activated cleaning gas into the processing chamber and which is characterized in that a mixed gas of F2 gas and an inert gas are used as the cleaning gas. A concentration of the F2 gas is 10% or higher. The F2 gas, which is a cleaning gas, is supplied to the remote plasma-discharge device from an F2 gas cylinder by diluting F2 gas at a given concentration by an inert gas.
Claims9
A method of cleaning a CVD processing chamber equipped with upper and lower parallel flat plate electrodes after processing a wafer, using a remote plasma-discharge device, comprising:
- selecting as the upper and lower electrodes a lower electrode having a surface area which is 1.08 to 1.38 times that of the wafer, and an upper electrode having a surface area which is 1.05 to 1.44 times that of the lower electrode;
- supplying a mixed gas of F2 gas and an inert gas as a cleaning gas to the remote plasma-discharge device, wherein the mixed gas contains the F2 gas at a concentration of 20% or higher;
- activating the cleaning gas inside the remote plasma-discharge device;
- and
- bringing the activated cleaning gas into the processing chamber while controlling the upper electrode at a temperature of 200° C. to 400° C.
A method of cleaning a CVD processing chamber equipped with upper and lower parallel flat plate electrodes after processing a wafer, using a remote plasma-discharge device, comprising:
- selecting as the upper and lower electrodes a lower electrode having a surface area which is 1.08 to 1.38 times that of the wafer, and an upper electrode having a surface area which is 1.05 to 1.44 times that of the lower electrode;
- supplying a mixed gas consisting of F2 gas and an inert gas as a cleaning gas to the remote plasma-discharge device, by supplying the F2 gas from a gas cylinder which is filled with F2 gas and diluting the F2 gas at a given concentration by the inert gas upstream of the remote plasma-discharge device;
- activating the cleaning gas inside the remote plasma-discharge device;
- and
- bringing the activated cleaning gas into the processing chamber while controlling the upper electrode at a temperature of 200° C. to 400° C.
A method of cleaning a CVD processing chamber equipped with upper and lower parallel flat plate electrodes after processing a wafer, using a remote plasma-discharge device, comprising:
- selecting as the upper and lower electrodes a lower electrode having a surface area which is 1.08 to 1.38 times that of the wafer, and an upper electrode having a surface area which is 1.05 to 1.44 times that of the lower electrode;
- supplying a mixed gas consisting of F2 gas and an inert gas as a cleaning gas to the remote plasma-discharge device, by supplying the F2 gas diluted at a given concentration by mixing the inert gas supplied from an inert gas cylinder in F2 gas generated by an F2 generator, upstream of the remote plasma-discharge device;
- activating the cleaning gas inside the remote plasma-discharge device;
- and
- bringing the activated cleaning gas into the processing chamber while controlling the upper electrode at a temperature of 200° C. to 400° C.
Dependencies are inferred from the claim text.