Semiconductor device having transferred integrated circuit

A semiconductor device comprising:

• a circuit board;
• at least first and second terminals formed on the circuit board;
• a first adhesive agent formed on the circuit board;
• a first functional circuit peeled from a first processing substrate at a first tungsten oxide layer, and mounted over the circuit board with the first adhesive agent therebetween, the first functional circuit comprising:
• a central processing unit including at least one thin film transistor;
• a first electrode electrically connected to the first terminal;
• a first insulating film on the first electrode and the first adhesive agent, wherein the thin film transistor over the first insulating layer wherein the first electrode is electrically connected to the thin film transistor;
• a second insulating film over the thin film transistor;
• a residual of the first tungsten oxide layer over the second insulating film;
• and
• a heat sink formed over the residual of the first tungsten oxide layer, and over the first functional circuit;
• a second adhesive agent formed on the circuit board;
• a second functional circuit peeled from a second processing substrate at a second tungsten oxide layer, and mounted over the circuit board with the second adhesive agent therebetween, the second functional circuit comprising:
• a high frequency circuit including a passive element;
• a third insulating film over the passive element;
• a residual of the second tungsten oxide layer over the third insulating film;
• and
• a second electrode on the residual of the second tungsten oxide layer wherein the second electrode is electrically connected to the second terminal;
• an antenna pattern formed over the second functional circuit, electrically connected to the second functional circuit through the circuit board.