Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction
AssigneeRJ Mears, LLC
InventorsRobert J. Mears, Robert John Stephenson
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Abstract
A method for making a semiconductor device may include forming a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon. The energy band-modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming at least one pair of oppositely-doped regions in the superlattice defining at least one semiconductor junction.
Claims26
A method for making a semiconductor device comprising:
- forming a superlattice comprising a plurality of stacked groups of layers;
- each group of layers of the superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon;
- the energy band-modifying layer comprising at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions, and at least some silicon atoms from opposing silicon portions of the superlattice being chemically bound together through the at least one non-semiconductor monolayer therebetween;
- and
- forming at least one pair of oppositely-doped regions in the superlattice defining at least one semiconductor junction.
A method for making a semiconductor device comprising:
- forming a superlattice comprising a plurality of stacked groups of layers;
- each group of layers of the superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying layer thereon;
- the energy band-modifying layer comprising at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions, and at least some silicon atoms from opposing silicon portions of the superlattice being chemically bound together through the at least one oxygen monolayer therebetween;
- and
- forming at least one pair of oppositely-doped regions in the superlattice in direct contact with one another and defining at least one semiconductor junction.
A method for making a semiconductor device comprising:
- forming a superlattice comprising a plurality of stacked groups of layers;
- each group of layers of the superlattice comprising a plurality of stacked base silicon monolayers defining a base silicon portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions, and at least some silicon atoms from opposing silicon portions of the superlattice being chemically bound together through the at least one non-semiconductor monolayer therebetween;
- and
- forming at least one pair of oppositely-doped regions in the superlattice defining at least one semiconductor junction.
Dependencies are inferred from the claim text.