Technique for the growth of planar semi-polar gallium nitride
AssigneeThe Regents of the University of California
InventorsTroy J. Baker, Benjamin A. Haskell, Paul T. Fini, Steven P. DenBaars, James S. Speck, Shuji Nakamura
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Abstract
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.
Claims18
A method for growing a nitride film, comprising:
- growing a planar, semi-polar nitride film on a substrate, wherein the planar, semi-polar nitride film is grown parallel to the substrate's surface.
Dependencies are inferred from the claim text.