Formation of boride barrier layers using chemisorption techniques
AssigneeApplied Materials, Inc.
InventorsJeong Soo Byun, Alfred Mak
Life of this patent
Estimating the term…
Abstract
A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.
Claims28
A method for depositing a metal-containing layer on a substrate, comprising:
- positioning a substrate within a process chamber;
- and
- forming a metal boride layer on at least a portion of the substrate by sequentially chemisorbing monolayers of a boron-containing compound and a metal-containing compound on the substrate during an atomic layer deposition process wherein the metal boride layer is formed at a temperature of less than about 500° C.
A method for forming a titanium and boron-containing layer on a substrate comprising:
- positioning a substrate within a process chamber;
- and
- forming a titanium layer comprising boron on at least a portion of the substrate by sequentially chemisorbing monolayers of a titanium-containing compound and a boron-containing compound on the substrate during an atomic layer deposition process wherein the titanium layer comprising boron is formed at a temperature of less than about 500° C.
A method for depositing a material on a substrate, comprising:
- placing a substrate within a process chamber
- introducing a boron-containing compound into the process chamber;
- chemisorbing at least a portion of the boron-containing compound on the substrate at conditions sufficient to form a boron-containing layer;
- purging the process chamber with a purge gas;
- introducing a metal-containing compound into the process chamber;
- reacting a portion of the metal-containing compound with the boron-containing layer at conditions sufficient to form a metal boride-containing layer, wherein the metal boride-containing layer is formed at a temperature of less than about 500° C.;
- and
- purging the process chamber with the purge gas.
A method for depositing a material on a substrate, comprising:
- placing a substrate within a process chamber;
- introducing a metal-containing compound into the process chamber;
- chemisorbing at least a portion of the metal-containing compound on the substrate at conditions sufficient to form a metal-containing layer;
- purging the process chamber with a purge gas;
- introducing a boron-containing compound into the process chamber;
- reacting a portion of the boron-containing compound with the metal-containing layer at conditions sufficient to form a metal boride-containing layer wherein the metal boride-containing layer is formed at a temperature of less than about 500° C.;
- and
- purging the process chamber with the purge gas.
Dependencies are inferred from the claim text.