Method of forming light emitting devices including forming mesas and singulating

A method for producing a light-emitting semiconductor component, which has the following method steps:

• (a) epitaxially depositing a light-emitting semiconductor layer (2) on a growth substrate (1),
• (b) providing the semiconductor layer (2) with a metallic contact layer (3),
• (ba) etching of mesa trenches (10) for the definition of individual chips between the mesa trenches (10), the mesa trenches (10) at least extending through the entire semiconductor layer (2) and the entire contact layer (3),
• (c) producing an adhesion and wetting layer (6) at least above the metallic contact layer (3),
• (d) applying, producing or depositing a mechanically stable carrier substrate (7) onto the adhesion and wetting layer (6),
• (e) separating the semiconductor layer (2) from the growth substrate (1),
• (g) applying an electrical contact (8) on the semiconductor layer (2), and
• (h) singulating the chips by separation along the mesa trenches (10).