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US 7,204,935 B2Granted
Method of etching a metallic film on a substrate
AssigneeOregon Health & Science University
InventorsRajendra Solanki, Balu Pathangey
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Abstract
A method of etching a metallic film on a substrate. This method operates to inject an oxidizing agent through the use of a carrier gas to etch a source metal in the presence of a reducing agent such that the rate of etching can be controlled by controlling the flow rate of the carrier gas, the substrate temperature, the pulse widths of the oxidizing and reducing agents, and the number of etching phases.
Claims8
A method for etching copper films on a substrate, the method comprising the steps of:
- a. placing a substrate having a temperature in the range of 120° C. to 300° C. and comprising an upper surface, a lower surface, and silicon in a reaction cell, wherein at least one of said surfaces is coated with a copper layer;
- b. injecting an oxidizing agent into the cell through the use of a carrier gas during a first pulse of 1–20 seconds duration;
- c. injecting a purge pulse comprising an inert gas into the cell during a second pulse of 1–10 seconds duration;
- d. injecting a reducing agent into the cell during a third pulse of 1–10 seconds duration;
- and
- e. injecting an inert gas into the cell during a fourth pulse of 1–10 seconds duration, wherein the steps a. through e. are sequentially performed over time.
3 more elements
A method for etching copper films on a substrate, the method comprising the steps of:
- a. placing a substrate having a temperature in the range of 120° C. to 300° C. and comprising an upper surface, a lower surface, and silicon in a reaction cell, wherein at least one of said surfaces is coated with a copper layer;
- b. injecting an oxidizing agent into the cell through the use of a carrier gas during a first pulse of 1–20 seconds duration;
- c. injecting a purge pulse comprising an inert gas into the cell during a second pulse of 1–10 seconds duration;
- d. injecting a reducing agent comprising hydrogen into the cell during a third pulse of 1–10 seconds duration;
- and
- e. injecting an inert gas selected from a group consisting of nitrogen, argon and helium into the cell during a fourth pulse of 1–10 seconds duration, wherein the steps a. through e. are sequentially performed over time.
3 more elements
Dependencies are inferred from the claim text.