Organic semiconductor element, production method therefor and organic semiconductor device

An organic semiconductor element comprising a gate electrode, a gate insulating layer, an organic semiconductor layer, source/drain electrodes and a protective film which are provided on a surface of a substrate, wherein the organic semiconductor element further comprises an island-shaped protrusion layer having dispersed and island-shaped protrusions with a low surface energy, wherein the island-shaped protrusion layer is formed by spin coating or spray coating, the organic semiconductor layer is formed after forming the island-shaped protrusion layer, and the organic semiconductor layer is in contact with the island-shaped protrusions, and wherein the island-shaped protrusions with the low surface energy are made of a fluorine-based polymer selected from the group consisting of polyfumarate-based polymers and cyclic perfluoropolymers.

An organic semiconductor element comprising a gate electrode, a gate insulating layer, an organic semiconductor layer, source/drain electrodes and a protective film which are provided on a surface of a substrate, wherein the organic semiconductor element further comprises an island-shaped protrusion layer having dispersed and island-shaped protrusions with a low surface energy, wherein the island-shaped protrusion layer is formed by spin coating or spray coating, the organic semiconductor layer is formed after forming the island-shaped protrusion layer, and the organic semiconductor layer is in contact with the island-shaped protrusions, and wherein the island-shaped protrusions with the low surface energy are made of a fluorine-based compound selected from the group consisting of fluoroalkylsilane compounds and perfluoroether based compounds.

A production method of an organic semiconductor element, comprising providing on a surface of a substrate a gate electrode, a gate insulating layer, an organic semiconductor layer, source/drain electrodes and a protective film, wherein the method further comprises providing on the surface of the substrate an island-shaped protrusion layer having dispersed and island-shaped protrusions with a low surface energy, and wherein the island-shaped protrusions are formed in a dispersed manner by spin coating or spray coating, the organic semiconductor layer is formed after forming the island-shaped protrusion layer, and the organic semiconductor layer is formed in contact with the island-shaped protrusions.