A method for forming a semiconductor nanocrystal pattern on a substrate, comprising the steps of (a) coating a substrate with a dispersion of semiconductor nanocrystals selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, GaN, GaP, GaAs, InP, InAs, and mixtures thereof in an organic solvent, wherein said semiconductor nanocrystals are surface-coordinated with a compound containing a photosensitive functional group represented by Formula 1 below:
- X—A—B (1)
- wherein X is NC—, HOOC—, HRN—, POOOH—, RS—or RSS—(in which R is a hydrogen atom or a C1-10 saturated or unsaturated aliphatic hydrocarbon group);
- A is a direct bond, an aliphatic organic group, a phenylene group or a biphenylene group;
- and B is an organic group containing at least one carbon-carbon double bond, which may be substituted with at least one group selected from the group consisting of—CN, —COOH, halogen groups, C1-5 halogenated alkyl groups, amine groups, C6-15 aromatic hydrocarbon groups, and C6-12 aromatic hydrocarbon groups substituted with F, CI, Br, a haloaenated alkyl group, R′O—(in which R′ is a hydrogen atom or a C1-5 alkyl group), —COOH, an amine group or —NO2;
- (b) evaporating said organic solvent to form a nanoparticle film on said substrate of said semiconductor nanocrystals in combination with said surface-coordinated compound containing a photosensitive group;
- (c) selectively exposing the film to light through a mask wherein a crosslinking reaction takes place resulting in a solubility difference between exposed and unexposed areas;
- and (d) developing the exposed film with the use of an organic solvent, a weakly acid or basic solution, or water.