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US 7,198,972 B2Granted
Laser diode having an active layer containing N and operable in a 0.6 μm wavelength band
AssigneeRicoh Company, Ltd.
InventorShunichi Sato
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Abstract
An optical semiconductor device operable in a 0.6 μm band includes an active layer of GaInNP sandwiched by a pair of GaInP layer with a thickness of about 2 molecular layers or less.
Claims4
A method of fabricating a compound semiconductor device, comprising the step of:
- (a) forming a first group III–V compound semiconductor layer epitaxially on a substrate;
- (b) exposing a surface of said first group III–V compound semiconductor layer to an atmosphere containing N;
- (c) forming, after said step (b), a second group III–V compound semiconductor layer on said first group III–V compound semiconductor layer epitaxially, said first group III–V compound semiconductor layer being free from N, said second group III–V compound semiconductor layer containing therein N as a group V element,
- wherein said atmosphere is substantially free from a group III element.
1 more element
Dependencies are inferred from the claim text.