Method of manufacturing nano scale semiconductor device using nano particles

A method of manufacturing a nano scale semiconductor device, the method comprising:

• dispersing uniformly a plurality of nano particles on a semiconductor substrate;
• forming an insulating layer covering the nano particles on the semiconductor substrate;
• partly removing the upper surfaces of the nano particles and the insulating layer;
• selectively removing the nano particles in the insulating layer;
• and
• partly forming doped semiconductor layers in the semiconductor substrate by doping the semiconductor substrate through spaces formed by removing the nano particles;
• forming metal layers on upper surfaces of the doped semiconductor layers;
• exposing the semiconductor substrate by selectively removing the insulating layer;
• depositing a dielectric layer having a uniform thickness on the semiconductor substrate, upper and side surfaces of the metal layers;
• depositing a polycrystalline silicon layer on the dielectric layer;
• and
• removing the dielectric layer and the polycrystalline silicon layer until the metal layer is exposed.