Substrate layer cutting device and method
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsMuriel Martinez, Thierry Barge, Alain Soubie, Chrystelle Lagahe-Blanchard, Cécile Berne, Olivier Rayssac
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AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsMuriel Martinez, Thierry Barge, Alain Soubie, Chrystelle Lagahe-Blanchard, Cécile Berne, Olivier Rayssac
Estimating the term…
An automatic high-precision layer cutting device for separating a layer from a semiconductor substrate. The cutting device includes a fixed positioning member for receiving at least a portion of a semiconductor substrate that has a weakened area therein and a peripheral annular notch that is located below the weakened area. The positioning member maintains a predetermined position of the substrate on a support. The device also includes cutting means having at least one blade for contacting the substrate and for inducing a cleaving wave into the substrate. The cutting means is operatively associated with the positioning member so that the at least one blade contacts the annular notch and the positioning member prevents movement of the substrate. The at least one blade induces a cleaving wave of sufficient intensity to both divide the substrate at the notch into first and second parts and detach the layer from the substrate along the weakened area.
An automatic high-precision cutting method for separating a layer of material from a source substrate comprising:
An automatic high-precision cutting method for separating a layer of material from a source substrate comprising:
An automatic high-precision cutting method for separating a layer of material from a source substrate comprising:
Dependencies are inferred from the claim text.