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US 7,187,585 B2Granted
Read operation for non-volatile storage that includes compensation for coupling
AssigneeSanDisk Corporation
InventorsYan Li, Jian Chen
Life of this patent
Estimating the term…
Abstract
Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pronouncedly between sets of adjacent memory cells that have been programmed at different times. To compensate for this coupling, the read process for a given memory cell will take into account the programmed state of an adjacent memory cell.
Claims10
A method for reading data from non-volatile storage, comprising:
- receiving a request to read data from a first non-volatile storage element;
- performing a read operation on a second non-volatile storage element in response to said request, said second non-volatile storage element adjacent said first non-volatile storage element, said second non-volatile storage element capable of storing data for multiple groupings of data;
- determining a reference value for reading said first non-volatile storage element based on a subset of said groupings of data capable of being stored in said second non-volatile storage element;
- and
- reading data stored in said first non-volatile storage element in response to said request using said reference value.
2 more elements
Dependencies are inferred from the claim text.