ZnO/Cu(InGa)Se2 solar cells prepared by vapor phase Zn doping
AssigneeMidwest Research Institute
InventorsKannan Ramanathan, Falah S. Hasoon, Sarah E. Asher, James Dolan, James C. Keane
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Abstract
A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se2 layer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se2.
Claims11
A process for making a thin film ZnO/Cu(InGa)Se2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising:
- a) depositing Cu(InGa)Se2 layer on a metal back contact deposited on a glass substrate;
- b) heating the Cu(InGa)Se2 layer on said metal back contact on said glass substrate to a temperature range between about 100° C. to about 250° C.;
- c) subjecting the heated layer of Cu(InGa)Se2 to an evaporant species from Zn acetate dihydrate to dope the Cu(InGa)Se2 with Zn and form a ZnO deposit and etching with acetic acid in an amount of 50% by volume in water to remove the ZnO deposit;
- and
- d) sputter depositing ZnO on the Zn acetate dihydrate evaporant species treated layer of Cu(InGa)Se2.
Dependencies are inferred from the claim text.